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dat a sheet product specification supersedes data of 1997 sep 03 1997 dec 08 discrete semiconductors bf1109; bf1109r; bf1109wr n-channel dual-gate mos-fets
1997 dec 08 2 nxp semiconductors product specification n-channel dual-gate mos-fets bf1109; bf1109r; bf1109wr features ? short channel transistor with high forward transfer ad mittance to input capacitance ratio ? low noise gain controlled amplifier up to 1 ghz ? internal self-biasing circuit to ensure good cross-modulation performance during agc and good dc stabilization. applications ? vhf and uhf applications with 9 v supply voltage, such as television tuners and professional communications equipment. description enhancement type n-channel field-effect transistor with source and substrate interconnected. integrated diodes between gates and source protect against excessive input voltage surges. the bf1109, bf1109r and bf1109wr are encapsulated in the sot143b, sot143r and sot343r plastic packages respectively. pinning pin description 1source 2drain 3 gate 2 4 gate 1 fig.1 simplified outline (sot143b). bf1109 marking code: nfp. handbook, 2 columns top view msb014 12 3 4 fig.2 simplified outline (sot143r). bf1109r marking code: nbp. handbook, 2 columns top view msb035 1 2 4 3 fig.3 simplified outline (sot343r). bf1109wr marking code: nb. ok, halfpage top view msb842 21 4 3 quick reference data symbol parameter conditions min. typ. max. unit v ds drain-source voltage ?? 11 v i d drain current (dc) ?? 30 ma p tot total power dissipation t amb ? 80 ? c ?? 200 mw ? y fs ? forward transfer admittance ? 30 ? ms c ig1-ss input capacitance at gate 1 ? 2.2 2.7 pf c rss reverse transfer capacitance f = 1 mhz ? 25 40 ff f noise figure f = 800 mhz ? 1.5 2.5 db x mod cross-modulation input level for k = 1% at 40 db agc 100 ??db ? v t j operating junction temperature ??150 ? c caution this product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling.
1997 dec 08 3 nxp semico nductors product specification n-channel dual-gate mos-fets bf1109; bf1109r; bf1109wr limiting values in accordance with the absolute maximum rating system (iec 134). note 1. device mounted on a printed-circuit board. symbol parameter conditions min. max. unit v ds drain-source voltage ? 11 v i d drain current (dc) ? 30 ma i g1 gate 1 current ?? 10 ma i g2 gate 2 current ?? 10 ma p tot total power dissipation t amb ? 80 ? c; note 1 ? 200 mw t stg storage temperature ? 65 +150 ? c t j operating junction temperature ? +150 ? c fig.4 power derating curve. handbook, halfpage 0 40 80 160 250 0 200 mgm243 120 150 100 50 p tot (mw) t amb (c)
1997 dec 08 4 nxp semico nductors product specification n-channel dual-gate mos-fets bf1109; bf1109r; bf1109wr thermal characteristics note 1. device mounted on a printed-circuit board. static characteristics t j =25 ? c unless otherwise specified. dynamic characteristics common source; t amb =25 ? c; v g2-s =4v; v ds = 9 v; self-biasing current; unless otherwise specified. symbol parameter conditions value unit r th j-a thermal resistance from junction to ambient in free air note 1 350 k/w r th j-s thermal resistance from junction to soldering point 200 k/w symbol parameter conditions min. max. unit v (br)dss drain-source breakdown voltage v g1-s =v g2-s =0; i d =10 ? a11 ? v v (br)g1-ss gate 1-source breakdown voltage v g2-s =0; i g1-s =10 ? a; i d =0 11 ? v v (br)g2-ss gate 2-source breakdown voltage v g1-s =v ds =0; i g2-s =10 ? a11 ? v v g2-s (th) gate 2-source threshold voltage v g1-s =9v; v ds =9v; i d =20 ? a0.31.2v i dsx self-biasing drain current v g2-s =4v; v ds =9v 8 16 ma i g1-ss gate 1 cut-off current v g1-s =9v; v g2-s =0; i d =0 ? 20 na i g2-ss gate 2 cut-off current v g1-s =v ds =0; v g2-s =9v ? 20 na symbol parameter conditions min. typ. max. unit ? y fs ? forward transfer admittance pulsed; t j =25 ? c2430 ? ms c ig1-ss input capacitance at gate 1 f = 1 mhz ? 2.2 2.7 pf c ig2-ss input capacitance at gate 2 f = 1 mhz ? 1.5 ? pf c oss output capacitance f = 1 mhz ? 1.3 ? pf c rss reverse transfer capacitance f = 1 mhz ? 25 40 ff f noise figure f = 800 mhz; y s =y sopt ? 1.5 2.5 db g p power gain g s =2ms; b s =b sopt ; g l = 0.5 ms; b l =b lopt ; f = 200 mhz; see fig.16 ? 38 ? db g s =3.3ms; b s =b sopt ; g l =1ms; b l =b lopt ; f = 800 mhz; see fig.17 ? 20 ? db x mod cross-modulation input leve l for k = 1% at 0 db agc; f w =50mhz; f unw =60mhz; seefig.18 85 ??db ? v input level for k = 1% at 40 db agc; f w =50mhz; f unw =60mhz; seefig.18 100 ??db ? v
1997 dec 08 5 nxp semico nductors product specification n-channel dual-gate mos-fets bf1109; bf1109r; bf1109wr fig.5 output characteristics; typical values. v g2-s =4v. t j =25 ? c. handbook, halfpage 01 0 25 0 5 10 15 20 2468 mda613 i d (ma) v ds (v) v g1 = 1.6 v 1.3 v 1.2 v 1.1 v 1.5 v 1.4 v 1 v fig.6 transfer characteristics; typical values. v ds =9v. t j =25 ? c. handbook, halfpage 0 40 20 30 10 0 0.5 2.5 mda614 1 1.5 2 v g1 (v) i d (ma) 2 v 1 v v g2-s = 4 v 3.5 v 2.5 v 1.5 v 3 v fig.7 forward transfer admittance as a function of drain current; typical values. v ds =9v. t j =25 ? c. handbook, halfpage 0 1 02 03 0 40 30 10 0 20 mda615 i d (ma) y fs (ms) 3.5 v 3 v 2.5 v 2 v v g2-s = 4 v fig.8 drain current as a function of gate 2 voltage; typical values. (1) v ds =9v. (2) v ds =7v. (3) v ds =5v. (4) v ds =3v. handbook, halfpage 0 16 8 12 4 0 15 mda616 234 i d (ma) v g2-s (v) (1) (4) (3) (2)
1997 dec 08 6 nxp semico nductors product specification n-channel dual-gate mos-fets bf1109; bf1109r; bf1109wr fig.9 drain current as a function of drain-source voltage; typical values. v g2-s =4v. t j =25 ? c. handbook, halfpage 02 10 16 12 4 0 8 46 8 mda617 i d (ma) v ds (v) fig.10 drain current as a function of gate 1 current; typical values. v ds =9v; v g2-s =4v; t j =25 ? c. handbook, halfpage ?8 ?6 ?40 mda618 ?2 16 8 12 4 0 i d (ma) i g1 (a) v ds =9v; v g2nom =4v; i dnom =12ma; f w =50mhz; f unw =60mhz; t amb =25 ? c. fig.11 unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values (see fig.18). handbook, halfpage 02 0 v unw (dbv) gain reduction (db) 40 60 120 110 90 80 100 mda619
1997 dec 08 7 nxp semico nductors product specification n-channel dual-gate mos-fets bf1109; bf1109r; bf1109wr fig.12 input admittance as a function of frequency; typical values. v ds =9v; v g2-s =4v. i d =12ma; t amb =25 ? c. handbook, halfpage mda620 10 2 10 ?2 10 10 2 10 3 10 ?1 1 10 f (mhz) y is (ms) g is b is fig.13 reverse transfer admittance and phase as a function of frequency; typical values. v ds =9v; v g2-s =4v. i d =12ma; t amb =25 ? c. handbook, halfpage mda621 10 3 10 2 10 1 10 10 2 10 3 f (mhz) |y rs | (ms) ? rs (deg) ?10 3 ?1 ?10 ?10 2 ? rs |y rs | fig.14 forward transfer admittance and phase as a function of frequency; typical values. v ds =9v; v g2-s =4v. i d =12ma; t amb =25 ? c. handbook, halfpage mda622 10 2 ? fs (deg) ?10 2 ?1 ?10 10 1 10 10 2 10 3 f (mhz) |y fs | (ms) ? fs |y fs | fig.15 output admittance as a function of frequency; typical values. v ds =9v; v g2-s =4v. i d =12ma; t amb =25 ? c. handbook, halfpage mda623 10 1 10 ?1 10 ?2 10 10 2 10 3 f (mhz) y os (ms) b os g os
1997 dec 08 8 nxp semico nductors product specification n-channel dual-gate mos-fets bf1109; bf1109r; bf1109wr fig.16 gain test circuit. v ds =9v, g s =2ms, g l = 0.5 ms, f = 200 mhz. l1 = 45 nh, 4 turns, internal diameter = 4 mm, 0.8 mm copper wire. l2 = 160 nh, 3 turns, internal diameter = 8 mm, 0.8 mm copper wire; tapped at approximately half a turn from the cold side, to set g l =0.5ms. c1 adjusted for g s =2ms. handbook, full pagewidth bf1109 bf1109r bf1109wr mda624 330 k 47 k 15 pf 5.5 pf c1 1 nf 1 nf 1 nf 1 nf 1 nf 1 nf v agc v ds g1 g2 s d 1 nf 330 k 1 nf bb405 10 pf bb405 input 50 v tun input output 50 v tun output l2 l1 2 h fig.17 gain test circuit. v ds =9v, g s =3.3ms, g l =1ms, f=800mhz. l1 = 2 cm, silvered 0.8 mm copper wire 4 mm above ground plane. l2 = 2 cm, silvered 0.8 mm copper wire 4 mm above ground plane. l3 = 11 turns 0.5 mm copper wire without spacing, internal diameter = 3 mm, l = approx. 200 nh. handbook, full pagewidth input 50 output 50 bf1109 bf1109r bf1109wr mda625 47 k 0.5 to 3.5 pf 1 nf l3 l2 l1 1 nf 1 nf 1 nf v agc v ds g1 g2 s d 2 to 18 pf 4 to 40 pf 0.5 to 3.5 pf 1 nf
1997 dec 08 9 nxp semico nductors product specification n-channel dual-gate mos-fets bf1109; bf1109r; bf1109wr fig.18 cross-modulation test set-up. handbook, full pagewidth bf1109 bf1109r bf1109wr mda626 r gen 50 50 r1 = 50 10 k g2 g1 d s 10 nf v i 10 nf 4.7 nf 47 h 4.7 nf v g2 v ds table 1 scattering parameters: v ds =9v; v g2-s =4v; i d =12ma table 2 noise data: v ds =9v; v g2-s =4v; i d =12ma f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) 50 0.995 ? 3.71 3.013 175.0 0.000 88.2 0.998 ? 1.8 100 0.992 ? 7.29 3.002 170.2 0.001 83.7 0.997 ? 3.5 200 0.984 ? 14.3 2.967 160.7 0.002 86.2 0.995 ? 7.0 300 0.973 ? 21.2 2.922 151.3 0.002 83.2 0.992 ? 10.5 400 0.961 ? 27.9 2.869 142.0 0.003 84.1 0.990 ? 13.9 500 0.944 ? 34.4 2.793 132.9 0.003 85.7 0.987 ? 17.2 600 0.926 ? 40.8 2.730 124.1 0.003 88.4 0.985 ? 20.5 700 0.906 ? 46.9 2.660 1115.3 0.003 94.6 0.983 ? 23.7 800 0.887 ? 52.9 2.605 106.5 0.004 107.2 0.981 ? 26.8 900 0.868 ? 58.8 2.527 97.8 0.004 114.9 0.977 ? 30.0 1000 0.852 ? 64.3 2.457 89.6 0.004 129.7 0.9377 ? 33.1 f (mhz) f min (db) ? opt r n ( ? ) (ratio) (deg) 800 1.5 0.684 40.94 40.4
1997 dec 08 10 nxp semico nductors product specification n-channel dual-gate mos-fets bf1109; bf1109r; bf1109wr package outlines unit a references outline version european projection issue date iec jedec jeita mm 1.1 0.9 a 1 max 0.1 b 1 0.88 0.78 c 0.15 0.09 d 3.0 2.8 e 1.4 1.2 h e ywvq 2.5 2.1 0.45 0.15 0.55 0.45 e 1.9 e 1 1.7 l p 0.1 0.1 0.2 b p 0.48 0.38 dimensions (mm are the original dimensions) sot143b 04-11-16 06-03-16 0 1 2 mm scale plastic surface-mounted package; 4 leads sot143b d h e e a b v m a x a a 1 l p q detail x c y w m e 1 e b 2 1 3 4 b 1 b p
1997 dec 08 11 nxp semico nductors product specification n-channel dual-gate mos-fets bf1109; bf1109r; bf1109wr unit a references outline version european projection issue date iec jedec jeita mm 1.1 0.9 a 1 max 0.1 b 1 0.88 0.78 c 0.15 0.09 d 3.0 2.8 e 1.4 1.2 h e ywvq 2.5 2.1 0.55 0.25 0.45 0.25 e 1.9 e 1 1.7 l p 0.1 0.1 0.2 b p 0.48 0.38 dimensions (mm are the original dimensions) sot143r sc-61aa 04-11-16 06-03-16 0 1 2 mm scale plastic surface-mounted package; reverse pinning; 4 leads sot143r d h e e a b v m a x a a 1 l p q detail x c y w m e 1 e b 1 2 4 3 b 1 b p
1997 dec 08 12 nxp semico nductors product specification n-channel dual-gate mos-fets bf1109; bf1109r; bf1109wr references outline version european projection issue date iec jedec eiaj sot343r d a a 1 l p q detail x c h e e v m a a b 0 1 2 mm scale x 21 4 3 plastic surface-mounted package; reverse pinning; 4 leads sot343r w m b 97-05-21 06-03-16 b p unit a 1 max b p cd e b 1 h e l p qw v mm 0.1 1.1 0.8 0.4 0.3 0.25 0.10 0.7 0.5 2.2 1.8 1.35 1.15 e 2.2 2.0 1.3 e 1 0.2 y 0.1 0.2 1.15 dimensions (mm are the original dimensions) 0.45 0.15 0.23 0.13 e 1 a e y b 1
1997 dec 08 13 nxp semico nductors product specification n-channel dual-gate mos-fets bf1109; bf1109r; bf1109wr data sheet status notes 1. please consult the most recently issued document before initiating or completing a design. 2. the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest pr oduct status information is available on the internet at url http://www.nxp.com. document status (1) product status (2) definition objective data sheet development this document contains data from the objective specification for product development. preliminary data sheet qualification this document contains data from the preliminary specification. product data sheet production this document contains the product specification. definitions product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer, unless nxp semiconductors and customer have explicitly agreed otherwise in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semico nductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without lim itation - lost profits, lost savings, business interrup tion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semi conductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for incl usion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are fo r illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assi stance with ap plications or customer product design. it is customer?s sole responsibility to dete rmine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as for the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.
1997 dec 08 14 nxp semico nductors product specification n-channel dual-gate mos-fets bf1109; bf1109r; bf1109wr nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applications and products using nxp semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will c ause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeat ed exposure to lim iting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the general terms and conditions of comme rcial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconductors products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data ? the quick refere nce data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semiconductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semicond uctors? warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond nxp semiconductors? standard warranty and nxp semiconductors? product specifications.
nxp semiconductors provides high performance mixed signal and standard product solutions that leverage its leading rf, analog, power management, interface, security and digital processing expertise contact information for additional information please visit: http://www.nxp.com for sales offices addresses send e-mail to: salesaddresses@nxp.com ? nxp b.v. 2010 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liabilit y will be accepted by the publisher for any consequen ce of its use. publicat ion thereof d oes not con vey nor imply any license under patent- or other industrial or intellectual property rights. customer notification this data sheet was changed to reflect the new company name nxp semiconductors, including new legal definitions and disclaimers. no changes were made to the technical content, except for package outline drawings which were updated to the latest version. printed in the netherlands r77/02/pp 15 date of release: 1997 dec 08

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